High Bandwidth Memory (HBM)
고대역폭 메모리 (HBM)
A memory interface standard and product family based on 3D-stacked DRAM, in which multiple DRAM dies are vertically stacked and interconnected using through-silicon vias (TSVs), achieving far wider bandwidth and lower power consumption than conventional memory. Since SK Hynix produced the first chip in 2013, HBM has become an essential component of AI accelerators and data-center GPUs; by the mid-2020s, three firms, SK Hynix, Samsung Electronics, and Micron, controlled 97% of global production, making HBM a central front in the US-China semiconductor rivalry and the structural axis of South Korea's export economy.
Sources
- Wikipedia (EN) technical definition, development history, JEDEC standardization timeline, and generation specifications (HBM1 through HBM4); confirms SK Hynix first production in 2013, AMD Fiji as first product in 2015, and three-company market concentration
- Wikipedia (KO) Korean-language technical definition and history; confirms 고대역폭 메모리 as the standard Korean term and 광대역폭 메모리 as a variant
- ai-frontiers.org strategic analysis of HBM's role in AI chip performance, global industry concentration (97% by three firms), and US export control policy toward China; details December 2024 US export restrictions, Chinese stockpiling, and loophole exploitation
- itif.org analysis of HBM as the central pillar of South Korea's semiconductor export economy; documents $141.9 billion in 2024 semiconductor exports, 32.8% destination concentration in China, and Korean firms' 80–90% share of global HBM revenue